• DocumentCode
    1904470
  • Title

    Nonvolatile SRAM based on Phase Change

  • Author

    Takata, Masashi ; Nakayama, Kazuya ; Izumi, Takatomi ; Shinmura, Toru ; Akita, Junichi ; Kitagawa, Akio

  • Author_Institution
    Graduate Sch. of Natural Sci. & Technol., Kanazawa Univ.
  • fYear
    2006
  • fDate
    12-16 Feb. 2006
  • Firstpage
    95
  • Lastpage
    96
  • Abstract
    We propose a novel architecture (phase change nonvolatile SRAM: PNSRAM) combining SRAM with PRAM. This architecture is possible solution to reduce the program cycle at the nonvolatile material to be divided a program sequence into volatile and nonvolatile. In this paper, we describe the PNSRAM architecture and a circuit simulation results of the volatile and nonvolatile operation
  • Keywords
    SRAM chips; memory architecture; phase change materials; PNSRAM architecture; circuit simulation; nonvolatile materials; nonvolatile operation; phase change nonvolatile SRAM; program sequence; volatile operation; Circuit simulation; Conductivity; Energy consumption; Leakage current; MOSFETs; Nonvolatile memory; Phase change random access memory; Random access memory; Resistors; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Non-Volatile Semiconductor Memory Workshop, 2006. IEEE NVSMW 2006. 21st
  • Conference_Location
    Monterey, CA
  • Print_ISBN
    1-4244-0027-9
  • Type

    conf

  • DOI
    10.1109/.2006.1629510
  • Filename
    1629510
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1904470