• DocumentCode
    1904577
  • Title

    Copper direct bonding for 3D integration

  • Author

    Gueguen, Pierric ; Di Cioccio, Lea ; Rivoire, Maurice ; Scevola, Daniel ; Zussy, Marc ; Charvet, Anne Marie ; Bally, Laurent ; Lafond, Dominique ; Clavelier, Laurent

  • Author_Institution
    CEA Léti - MINATEC, 17 rue des Martyrs, F-38054 Grenoble Cedex 9, France, e-mail: pierric.gueguen@cea.fr
  • fYear
    2008
  • fDate
    1-4 June 2008
  • Firstpage
    61
  • Lastpage
    63
  • Abstract
    In 3D integration circuits, metal bonding is a key stage for stacking wafers. In this contribution, the direct Cu/Cu bonding at atmospheric pressure is investigated. At room temperature, a 2.8 J/m2 bonding toughness is achieved without copper oxide at the interface. The vertical current of this bonding and the possibility to grind the top silicon down to 10 ¿m have been demonstrated.
  • Keywords
    Bonding; Copper; Decision support systems; Quadratic programming;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Interconnect Technology Conference, 2008. IITC 2008. International
  • Conference_Location
    Burlingame, CA, USA
  • Print_ISBN
    978-1-4244-1911-1
  • Electronic_ISBN
    978-1-4244-1912-8
  • Type

    conf

  • DOI
    10.1109/IITC.2008.4546926
  • Filename
    4546926
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1904577