• DocumentCode
    1904633
  • Title

    Structure-Designable Formation-Method of Super Low-k SiOC Film (k=2.2) by Neutral-Beam-Enhanced-CVD

  • Author

    Yasuhara, Shigeo ; Chung, Juhyun ; Tajima, Kunitoshi ; Yano, Hisashi ; Kadomura, Shingo ; Yoshimaru, Masaki ; Matsunaga, Noriaki ; Kubota, Tomohiro ; Ohtake, Hiroto ; Samukawa, Seiji

  • Author_Institution
    Institute of Fluid Science, Tohoku University
  • fYear
    2008
  • fDate
    1-4 June 2008
  • Firstpage
    73
  • Lastpage
    75
  • Abstract
    Ar neutral beam enhanced chemical vapor deposition can control the dielectric constant and film modulus of low-k SiOC deposited on Si substrates precisely because it avoids precursor dissociation due to electron collisions and UV photons in plasma. Optimizing the ratio between Si-O and Si-(CH3)x as well as the proportions of linear, network, and cage Si-O structures by changing the precursor, we obtained a k of 2.2 and a reasonable modulus by using either dimethyl diethoxy silane or dimethyl dimethoxy silane as a precursor.
  • Keywords
    Argon; Chemical vapor deposition; Dielectric materials; Electrons; Particle beams; Pressure measurement; Semiconductor films; Semiconductor materials; Substrates; Thickness measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Interconnect Technology Conference, 2008. IITC 2008. International
  • Conference_Location
    Burlingame, CA, USA
  • Print_ISBN
    978-1-4244-1911-1
  • Electronic_ISBN
    978-1-4244-1912-8
  • Type

    conf

  • DOI
    10.1109/IITC.2008.4546929
  • Filename
    4546929
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1904633