• DocumentCode
    1904692
  • Title

    Hybrid e-CMP/CMP Process with Non-Contact Electrode Pad

  • Author

    Kondo, S. ; Abe, D. ; Enomoto, T. ; Tominaga, S. ; Yamada, K. ; Saito, S.

  • Author_Institution
    Semiconductor Leading Edge Technologies, Inc. (Selete), 16-1 Onogawa, Tsukuba, Ibaraki, 305-8569, Japan, Phone: +81-298-49-1285, Fax: +81-298-49-1452, E-mail: kondo.seiichi@selete.co.jp
  • fYear
    2008
  • fDate
    1-4 June 2008
  • Firstpage
    82
  • Lastpage
    84
  • Abstract
    We developed a damage-less electro-chemical mechanical planarization (e-CMP) method that does not use any contact electrodes with Cu wafers, but has anode-cells to maintain electric current for electrolysis reaction of H2O. A high removal rate of 1.4 um/min was obtained with an electro-polishing efficiency of 85%. Based on this technology, we propose a hybrid e-CMP/CMP process which combines a high speed e-CMP for removing bulk Cu film and a low-pressure CMP for clearing residual Cu and barrier metal films by using a newly developed hybrid slurry.
  • Keywords
    Anodes; Cathodes; Conductivity; Current; Electrochemical processes; Electrodes; Planarization; Slurries; Voltage; Water;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Interconnect Technology Conference, 2008. IITC 2008. International
  • Conference_Location
    Burlingame, CA, USA
  • Print_ISBN
    978-1-4244-1911-1
  • Electronic_ISBN
    978-1-4244-1912-8
  • Type

    conf

  • DOI
    10.1109/IITC.2008.4546932
  • Filename
    4546932
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1904692