DocumentCode
1904738
Title
Progress, Opportunities and Challenges in Modeling of Plasma Etching
Author
Yang, Yang ; Wang, Mingmei ; Kushner, Mark J.
Author_Institution
Department of Electrical and Computer Engineering, Iowa State University, 104 Marston Hall, Ames, IA 50011 USA, yangying@iastate.edu
fYear
2008
fDate
1-4 June 2008
Firstpage
90
Lastpage
92
Abstract
The development of plasma etching processes is challenged by the complexity of the chemistries and the unpredictability in the performance of plasma tools due to sometimes subtle changes in design. Challenges also face the use of modeling and simulation to provide a computational assist to the development of these processes. Selected issues in developing this modeling capability will be discussed.
Keywords
Etching; Frequency; Inductors; Plasma applications; Plasma chemistry; Plasma immersion ion implantation; Plasma materials processing; Plasma properties; Plasma simulation; Plasma transport processes;
fLanguage
English
Publisher
ieee
Conference_Titel
Interconnect Technology Conference, 2008. IITC 2008. International
Conference_Location
Burlingame, CA, USA
Print_ISBN
978-1-4244-1911-1
Electronic_ISBN
978-1-4244-1912-8
Type
conf
DOI
10.1109/IITC.2008.4546934
Filename
4546934
Link To Document