A GaAs HEMT MMIC chip set for automotive radar systems fabricated by optical stepper lithography

Author

Muller, J.-E. ; Bangert, A. ; Grave, T. ; Karner, M. ; Riechert, H. ; Schafer, A. ; Siweris, H. ; Schleicher, L. ; Tischer, H. ; Verweyen, L. ; Kellner, W. ; Meier, T.

Author_Institution

Siemens Corp. Res. & Dev., Munich, Germany

fYear

1996

fDate

3-6 Nov. 1996

Firstpage

189

Lastpage

192

Abstract

A production oriented GaAs HEMT MMIC chipset for a 77 GHz FMCW automotive radar system is reported. It differs mainly in two aspects from the GaAs MMIC solutions described earlier: (1) 0.12 /spl mu/m gatelength PHEMTs are fabricated by optical stepper lithography, (2) a coplanar design is used. A fully passivated PHEMT fabrication process is reported with current-gain and power-gain cutoff frequencies exceeding 115 and 220 GHz, respectively. The design and performance of the chipset consisting of four different MMICs (VCO, harmonic mixer, transmitter, receiver) is described. The great potential of this MMIC approach to meet all system requirements of an automotive radar sensor in a cost effective and production oriented way is shown.

Keywords

HEMT integrated circuits; III-V semiconductors; automotive electronics; field effect MIMIC; gallium arsenide; integrated circuit design; photolithography; radar equipment; 0.12 micron; 77 GHz; FMCW; GaAs; HEMT MMIC chip set; automotive radar systems; coplanar design; current-gain cutoff frequencies; fully passivated PHEMT fabrication process; optical stepper lithography; power-gain cutoff frequencies; Automotive engineering; Gallium arsenide; HEMTs; MMICs; Optical receivers; Optical sensors; Optical transmitters; PHEMTs; Production systems; Radar;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1996. Technical Digest 1996., 18th Annual

Conference_Location

Orlando, FL, USA

ISSN

1064-7775

Print_ISBN

0-7803-3504-X

Type

conf

DOI

10.1109/GAAS.1996.567866

Filename

567866