• DocumentCode
    1906465
  • Title

    Study of Vertical Transport through Schottky-Gated, Laterally Confined Quantum-Dot Devices

  • Author

    Blanc, N. ; Guéret, P. ; Germann, R. ; Rothuizen, Hugo

  • Author_Institution
    IBM Research Division, Zurich Research Laboratory, 8803 Rÿschlikon, Switzerland
  • fYear
    1991
  • fDate
    16-19 Sept. 1991
  • Firstpage
    671
  • Lastpage
    674
  • Abstract
    We present the conductance properties of resonant tunneling heterostructures, laterally confined by a Schottky gate so that the confinement can be varied in a continuous and controlled way. Data on dots with nominal diameters in the submicron range are reported.
  • Keywords
    Control systems; Etching; Gallium arsenide; Ohmic contacts; Potential well; Quantum dots; Resonant tunneling devices; Schottky barriers; Temperature control; Voltage control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1991. ESSDERC '91. 21st European
  • Conference_Location
    Montreux, Switzerland
  • Print_ISBN
    0444890661
  • Type

    conf

  • Filename
    5435245
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1906465