DocumentCode
1907043
Title
Optimization of the AlInAs Growth Temperature for AlInAs/GaInAs HEMTs Grown by MBE
Author
Künzel, H. ; Passenberg, W. ; Böttcher, J. ; Heedt, C.
Author_Institution
Heinrich-Hertz-Institut fÿr Nachrichtentechnik Berlin GmbH, Einsteinufer 37, D-1000 Berlin 10, Germany
fYear
1991
fDate
16-19 Sept. 1991
Firstpage
569
Lastpage
572
Abstract
The material characteristics of MBE grown AlInAs layers relevant to AlInAs/InGaAs HEMTs, such as surface morphology and specific resistivity, and doping and Schottky contact behaviour, have been investigated in dependence of the growth temperature. Respective optimum results were obtained at different temperatures which were adopted for the growth of HEMT structures. Preliminary results on 1 ¿m gate length devices are presented.
Keywords
Doping; Electrons; Gold; HEMTs; MODFETs; Rough surfaces; Schottky barriers; Surface morphology; Surface roughness; Temperature dependence;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1991. ESSDERC '91. 21st European
Conference_Location
Montreux, Switzerland
Print_ISBN
0444890661
Type
conf
Filename
5435267
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