Correlation between nanostructure and electron emission characteristics of ballistic electron surface-emitting device (BSD)

Author

Ichihara, T. ; Baba, T. ; Komoda, T. ; Koshida, N.

Author_Institution

Adv. Technol. Res. Lab., Matsushita Electr. Works Ltd., Kadoma, Japan

fYear

2003

fDate

7-11 July 2003

Firstpage

23

Lastpage

24

Abstract

The operation of ballistic electron emitters based on nanocrystallised poly-silicon (NPS) films has been analyzed by transmission electron microscope (TEM) and energy-dispersive X-ray microanalyzer (EDX). The results of nanostructural analyses indicate that the existence of interconnected nanocrystalline silicon (nc-Si) is a key factor for the efficient ballistic electron emission.

Keywords

X-ray chemical analysis; electron field emission; elemental semiconductors; nanostructured materials; semiconductor devices; semiconductor thin films; silicon; transmission electron microscopy; EDX; Si; TEM; ballistic electron emitters; ballistic electron surface emitting device; electron emission characteristics; energy dispersive X-ray microanalyzer; nanocrystallised polysilicon films; nanostructure characteristics; transmission electron microscopy; Agricultural engineering; Agriculture; Electrodes; Electron emission; Electron guns; Glass; Laboratories; Nanoscale devices; Power engineering and energy; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Microelectronics Conference, 2003. Technical Digest of the 16th International

Conference_Location

Osaka, Japan

Print_ISBN

4-8181-9515-4

Type

conf

DOI

10.1109/IVMC.2003.1222964

Filename

1222964