DocumentCode
1907277
Title
Quantum Transport Effects in Deep Submicron n-MOSFET
Author
Miéville, J.P. ; Eschle, M. ; Shi, Z.M. ; Barrier, J. ; Dutoit, M. ; Moret, J.M. ; Oppliger, Y.
Author_Institution
Institut de Micro-et Optoélectronique, Ecole Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland
fYear
1991
fDate
16-19 Sept. 1991
Firstpage
539
Lastpage
542
Abstract
MOSFET´s with gate lengths down to 0.1 ¿m were characterized at low temperatures. Below 20 K, characteristic peaks in the transconductance were observed in weak and moderate inversion at low drain voltages. This result can be explained by quantum transport mediated by localized states in the channel.
Keywords
Electron beams; Electron optics; Low voltage; MOSFET circuits; Microelectronics; Oxidation; Resists; Temperature measurement; Threshold voltage; Transconductance;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1991. ESSDERC '91. 21st European
Conference_Location
Montreux, Switzerland
Print_ISBN
0444890661
Type
conf
Filename
5435276
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