• DocumentCode
    1907571
  • Title

    Field emission characteristics of BN nanofilms grown on GaN substrates

  • Author

    Luo, H. ; Funakawa, S. ; Wenzhong Shen ; Sugino, T.

  • Author_Institution
    Dept. of Electr. Eng., Osaka Univ., Suita, Japan
  • fYear
    2003
  • fDate
    7-11 July 2003
  • Firstpage
    59
  • Lastpage
    60
  • Abstract
    We examine the field emission characteristics of BN nanofilms on both flat and roughened GaN surface with the field enchancement factor over 200.
  • Keywords
    III-V semiconductors; boron compounds; electron field emission; plasma CVD coatings; semiconductor thin films; surface roughness; wide band gap semiconductors; BN; BN nanofilms; GaN; field emission; field enchancement factor; roughened GaN surface; Boron; Electron emission; Gallium nitride; Iron; Physics; Plasma properties; Rough surfaces; Substrates; Surface roughness; Thick films;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vacuum Microelectronics Conference, 2003. Technical Digest of the 16th International
  • Conference_Location
    Osaka, Japan
  • Print_ISBN
    4-8181-9515-4
  • Type

    conf

  • DOI
    10.1109/IVMC.2003.1222982
  • Filename
    1222982
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1907571