• DocumentCode
    1907649
  • Title

    Electron emission from heavily nitrogen (N)-doped polycrystalline, homo, and heteroepitaxial CVD diamond

  • Author

    Mine, T. ; Yamaguchi, H. ; Yamada, T. ; Sawabe, A. ; Okano, K.

  • Author_Institution
    Dept. of Phys., Int. Christian Univ., Tokyo, Japan
  • fYear
    2003
  • fDate
    7-11 July 2003
  • Firstpage
    63
  • Lastpage
    64
  • Abstract
    Heteroepitaxial diamond is grown on a conducting substrate and its electron emission properties are investigated by comparing the electron emission properties of N-doped polycrystalline, homoepitaxial and heteroepitaxial diamond.
  • Keywords
    CVD coatings; diamond; electrical contacts; electron field emission; elemental semiconductors; nitrogen; semiconductor epitaxial layers; C:N; N-doped polycrystalline diamond; conducting substrate; electron emission properties; heteroepitaxial CVD diamond; homoepitaxial diamond; Anodes; Chemical vapor deposition; Contacts; Electron emission; Nitrogen; Optical films; Raman scattering; Spectroscopy; Substrates; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vacuum Microelectronics Conference, 2003. Technical Digest of the 16th International
  • Conference_Location
    Osaka, Japan
  • Print_ISBN
    4-8181-9515-4
  • Type

    conf

  • DOI
    10.1109/IVMC.2003.1222984
  • Filename
    1222984
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1907649