DocumentCode
1907784
Title
Modelization and fabrication of ISFET based sensors
Author
Merlos, A. ; Cané, C. ; Bausells, J. ; Esteve, J.
Author_Institution
Centre Nacional de Microelectronica (CSIC), Campus Universitat Autònoma de Barcelona, 08193-Bellaterra, SPAIN
fYear
1991
fDate
16-19 Sept. 1991
Firstpage
423
Lastpage
426
Abstract
An optimization of the fabrication technology has been carried out in order to fix the best parameters for ISFET devices. The main parameters taken into account are threshold voltage, which is adjusted by ion implantation and drain and source series resistances by optimizing dose, energy and post annealing processes. SUPREM-3 simulations have been used for this purpose. An electrical model of the ISFET to be included in SPICE simulator has also been developed and permits the determination of the electrical behaviour of the chemical sensor.
Keywords
CMOS technology; Chemical sensors; Chemical technology; Circuits; Fabrication; Intelligent sensors; Microelectronics; Passivation; SPICE; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1991. ESSDERC '91. 21st European
Conference_Location
Montreux, Switzerland
Print_ISBN
0444890661
Type
conf
Filename
5435297
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