Long range pinning interaction in ultra-thin insulator-inserted metal/germanium junctions

Author

Nishimura, T. ; Kita, K. ; Nagashio, K. ; Toriumi, A.

Author_Institution

Dept. of Mater. Eng., Univ. of Tokyo, Tokyo, Japan

fYear

2010

fDate

13-14 June 2010

Firstpage

1

Lastpage

2

Abstract

In this paper, we discuss the Fermi Level Pinning (FLP) modulation at metal/germanium (Ge) interface by inserting ultra-thin insulator film. The FLP was alleviated gradually and continuously with increasing insulator (GeO₂) thickness up to 2 nm. The results cannot be simply explained by the termination of dangling bonds or defects just at Ge interface. It is inferred that relatively long range (~ 2 nm) interaction between metal and Ge might be involved in the FLP and its alleviation.

Keywords

Fermi level; MIS structures; Schottky barriers; aluminium; copper; current density; dangling bonds; elemental semiconductors; germanium; germanium compounds; gold; insulating thin films; interface states; semiconductor thin films; Al-GeO_2-Ge; Au-GeO₂-Ge; Cu-GeO₂-Ge; Ge; Schottky barriers; charge neutrality; current density; dangling bonds; long range Fermi level pinning interaction; metal-germanium interface; ultrathin insulator film; Films; Gold; Insulators; Junctions; Schottky diodes; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Nanoelectronics Workshop (SNW), 2010

Conference_Location

Honolulu, HI

Print_ISBN

978-1-4244-7727-2

Electronic_ISBN

978-1-4244-7726-5

Type

conf

DOI

10.1109/SNW.2010.5562590

Filename

5562590