DocumentCode
1908757
Title
Application of a Linear Scaling Factor for Modeling I-V-Characteristics of Submicron MOSFETs with Channel Lengths down to 0.4 μm
Author
Wildau, H.-J. ; Scheidemantel ; Wagemann, H.G.
Author_Institution
Institut fÿr Werkstoffe der Elektrotechnik der Technischen Universitÿt Berlin, JebensstraÃ\x9fe 1, Sekr. J10, D-1000 Berlin 12, Germany
fYear
1991
fDate
16-19 Sept. 1991
Firstpage
225
Lastpage
228
Abstract
A simple method for predicting the I-V-characteristics of short-channel devices employing a linear scaling factor is described. To confirm the results of this method, measurements were taken of CMOS-transistors with channel lengths down to 0.4 μm, fabricated entirely by means of X-ray lithography.
Keywords
Computational modeling; Data mining; Doping; Length measurement; MOSFETs; Mathematical model; Microelectronics; Predictive models; X-ray lithography; X-ray scattering;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1991. ESSDERC '91. 21st European
Conference_Location
Montreux, Switzerland
Print_ISBN
0444890661
Type
conf
Filename
5435335
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