Preparation and Characterization of High Quality Lead-free BiFeO3 Thin Films by Sputtering Process

Author

Nakashima, S. ; Takada, Yasuhiro ; Ito, Takao ; Seto, Shinta ; Fujisawa, Hiroyuki ; Kobune, M. ; Shimizu, Maiko

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Univ. of Hyogo, Himeji, Japan

fYear

2012

fDate

5-7 Nov. 2012

Firstpage

128

Lastpage

131

Abstract

BiFeO₃ (BFO) thin films have been prepared on SrTiO₃ (001) single crystal substrates by sputtering process which is suitable for mass production. Domain structure can be controlled by off-cut angle and direction of SrTiO₃ substrates. A lateral PFM and a XRD reciprocal space mapping results reveal the BFO thin film on SrTiO₃ (001) with 4° off-cut along [110] is single domain. The single domain BFO shows well-saturated ferroelectric D-E hysteresis loops at R.T.

Keywords

X-ray diffraction; bismuth compounds; ferroelectric thin films; sputter deposition; BFO thin films; BiFeO₃; SrTiO₃; XRD reciprocal space mapping; conventional RF planar magnetron sputtering process; deposition process; domain structure; dual ion beam sputtering; ferroelectric D-E hysteresis loops; high-quality lead-free thin film characterization; high-quality lead-free thin film preparation; lateral PFM; mass production; single-crystal substrates; BiFeO3; RF sputtering; ion beam sputtering; thin film;

fLanguage

English

Publisher

ieee

Conference_Titel

Emerging Trends in Engineering and Technology (ICETET), 2012 Fifth International Conference on

Conference_Location

Himeji

ISSN

2157-0477

Print_ISBN

978-1-4799-0276-7

Type

conf

DOI

10.1109/ICETET.2012.12

Filename

6495264