• DocumentCode
    1909321
  • Title

    MBE-grown (Ca, Sr) F2 layers on Si (111) and GaAs (111): Electronic structure of interfaces

  • Author

    Afanas, V.V. ; Novikov, S.V. ; Sokolov, N.S. ; Yakovlev, N.L.

  • Author_Institution
    Institute of Physics, Leningrad State University, 198904, USSR
  • fYear
    1991
  • fDate
    16-19 Sept. 1991
  • Firstpage
    139
  • Lastpage
    142
  • Keywords
    Electrons; Epitaxial growth; Fabrication; Gallium arsenide; Insulation; Molecular beam epitaxial growth; Silicon; Strontium; Substrates; Surface morphology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1991. ESSDERC '91. 21st European
  • Conference_Location
    Montreux, Switzerland
  • Print_ISBN
    0444890661
  • Type

    conf

  • Filename
    5435356
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1909321