Evaluation of performance and perspectives of nanocrystal flash memories based on 3D quantum modeling

Author

Coli, P. ; Iannaccone, G.

Author_Institution

Dipt. di Ingegneria dell´´Informazione, Pisa Univ., Italy

fYear

2001

fDate

2001

Firstpage

140

Lastpage

145

Abstract

In this paper we evaluate, from a quantitative point of view, the electrical properties of nanocrystal flash memories, in which the floating gate of conventional flash-EEPROMs is replaced with a layer of silicon nanocrystals. We have developed a three-dimensional solver of the Poisson-Schrodinger equation based on density functional theory, with the local density approximation. In this paper we focus on the stationary electric behavior of the memory devices, focusing on the effect of nanocrystal size and density, and providing a first estimate of the effect of randomness in the nanocrystal layer

Keywords

Poisson equation; Schrodinger equation; density functional theory; flash memories; integrated circuit modelling; nanotechnology; 3D quantum modeling; Poisson-Schrodinger equation; Si; density functional theory; local density approximation; nanocrystal density; nanocrystal flash memories; nanocrystal size; randomness; stationary electric behavior; three-dimensional solver; Dielectric substrates; EPROM; Electron traps; Flash memory; MOSFET circuits; Nanocrystals; Nonvolatile memory; Silicon; Threshold voltage; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology, 2001. IEEE-NANO 2001. Proceedings of the 2001 1st IEEE Conference on

Conference_Location

Maui, HI

Print_ISBN

0-7803-7215-8

Type

conf

DOI

10.1109/NANO.2001.966408

Filename

966408