• DocumentCode
    1909344
  • Title

    Charging properties of SIPOS used as a passivation layer on silicon

  • Author

    Liss, B ; Lindgren, Anders ; Engström, O.

  • Author_Institution
    Department of Solid State Electronics, Chalmers University of Technology, S - 412 96 Göteborg, Sweden
  • fYear
    1991
  • fDate
    16-19 Sept. 1991
  • Firstpage
    125
  • Lastpage
    128
  • Abstract
    The density of electron trap states and their energy distribution have been measured for SIPOS/Si interfaces. By keeping the interface at thermal equilibrium during the measurement, and avoiding the influence from electron leakage through the SIPOS layer, true trap state densities are obtained. We demonstrate that the density of states decreases with the oxygen concentration of SIPOS.
  • Keywords
    Aluminum; Charge carriers; Density measurement; Electron emission; Electron traps; Passivation; Photonic band gap; Silicon; Temperature; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1991. ESSDERC '91. 21st European
  • Conference_Location
    Montreux, Switzerland
  • Print_ISBN
    0444890661
  • Type

    conf

  • Filename
    5435357
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1909344