Effect of temperature on field emission properties from nanoclusters of tungsten oxide on silicon carbide

Author

Deng, S.Z. ; Xu, H.T. ; Zhen, X.G. ; Jun Zhou ; Jun Chen ; Xu, N.S.

Author_Institution

State Key Lab. of Optoelectron. Mater. & Technol., Zhongshan Univ., Guangzhou, China

fYear

2003

fDate

7-11 July 2003

Firstpage

189

Lastpage

190

Abstract

Tungsten nanoclusters films were grown on silicon carbide substrate in a thermal evaporation process without using catalyst. The temperature dependence of the field emission properties from the tungsten nanoclusters films has been studied in a range from 323 K to 543 K by using the transparent anode technique. The results show that the field emission current increases significantly with increasing temperature. As a consequence, the turn-on voltage for obtaining emission current density of 10 /spl mu/A/cm/sup 2/ decreases from 11.5 MV/m at 323 K to 2.375 MV/m at 543 K.

Keywords

current density; field emission; nanostructured materials; thin films; tungsten compounds; vacuum deposited coatings; 323 to 543 K; SiC; WO/sub 3/; field emission current density; field emission properties; silicon carbide substrate; temperature dependency; thermal evaporation; transparent anode technique; tungsten nanoclusters film growth; tungsten oxide nanoclusters; Anodes; Current density; Morphology; Nanomaterials; Scanning electron microscopy; Semiconductor films; Silicon carbide; Temperature dependence; Tungsten; Vacuum systems;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Microelectronics Conference, 2003. Technical Digest of the 16th International

Conference_Location

Osaka, Japan

Print_ISBN

4-8181-9515-4

Type

conf

DOI

10.1109/IVMC.2003.1223047

Filename

1223047