DocumentCode
1909643
Title
Potential barrier formation between closely separated quantum size film and a metal in an applied voltage
Author
Il´chenko, L.G. ; Il´chenko, V.V.
Author_Institution
Inst. of Surface Chem., Nat. Acad. of Sci., Kiev, Ukraine
fYear
2003
fDate
7-11 July 2003
Firstpage
203
Lastpage
204
Abstract
In this paper, the distribution of the potential barrier V(x.U) formed between a semi-infinite metal and a superthin metallic (semi-metal or degenerate semiconductor) film with a QS electron spectrum in an external applied voltage U is calculated, using the Green´s functions of the nonlocal Poisson equation.
Keywords
Fermi level; Green´s function methods; Poisson equation; dielectric function; semiconductor materials; semiconductor quantum dots; semiconductor quantum wells; semiconductor thin films; work function; Green´s functions; degenerate semiconductor film; dielectric function; electron spectrum; fermi level; nonlocal Poisson equation; potential barrier formation; quantum size film; semiinfinite metal; superthin metallic film; work function; Charge transfer; Chemistry; Dielectrics; Electrons; Microelectronics; Quantum dots; Semiconductor films; Shape; Vacuum systems; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Microelectronics Conference, 2003. Technical Digest of the 16th International
Conference_Location
Osaka, Japan
Print_ISBN
4-8181-9515-4
Type
conf
DOI
10.1109/IVMC.2003.1223054
Filename
1223054
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