Advanced CMOS transistors with a novel HfSiON gate dielectric

Author

Rotondaro, A.L.P. ; Visokay, M.R. ; Chambers, J.J. ; Shanware, A. ; Khamankar, R. ; Bu, H. ; Laaksonen, R.T. ; Tsung, L. ; Douglas, M. ; Kuan, R. ; Bevan, M.J. ; Grider, T. ; McPherson, J. ; Colombo, L.

Author_Institution

Silicon Technol. Dev., Texas Instrum. Inc., Dallas, TX, USA

fYear

2002

fDate

11-13 June 2002

Firstpage

148

Lastpage

149

Abstract

We report for the first time on short channel transistors fabricated using HfSiON, a new high-k gate dielectric material. HfSiON has superior electrical characteristics such as low leakage current relative to SiO/sub 2/, low interfacial trap density, electron and hole carrier mobilities /spl sim/80% of the universal curve at E/sub eff/>0.8 MV/cm and scalability to equivalent oxide thicknesses of less than 10 /spl Aring/. This material is also thermally stable up to 1100/spl deg/C in contact with poly Si, and exhibits boron blocking significantly better than SiO/sub 2/ and SiON. The results indicate that this material is a promising high-k gate dielectric with good transistor characteristics.

Keywords

CMOS integrated circuits; MOSFET; dielectric thin films; electron mobility; electronic density of states; hafnium compounds; hole mobility; interface states; leakage currents; permittivity; semiconductor device measurement; silicon compounds; thermal stability; 10 angstrom; 1100 C; CMOS transistors; HfSiON gate dielectric; HfSiON-Si; boron blocking; electrical characteristics; electron carrier mobility; equivalent oxide thickness scalability; high-k gate dielectric; hole carrier mobility; interfacial trap density; leakage current; poly Si contact stability; short channel transistors; thermally stable material; transistor characteristics; Boron; Charge carrier processes; Dielectric materials; Electric variables; Electron mobility; Electron traps; High K dielectric materials; Leakage current; Scalability; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2002. Digest of Technical Papers. 2002 Symposium on

Conference_Location

Honolulu, HI, USA

Print_ISBN

0-7803-7312-X

Type

conf

DOI

10.1109/VLSIT.2002.1015428

Filename

1015428