Effect of in-situ nitrogen doping into MOCVD-grown Al/sub 2/O/sub 3/ to improve electrical characteristics of MOSFETs with polysilicon gate

Author

Tanida, Y. ; Tamura, Y. ; Miyagaki, S. ; Yamaguchi, M. ; Yoshida, C. ; Sugiyama, Y. ; Tanaka, H.

Author_Institution

Fujitsu Labs. Ltd., Atsugi, Japan

fYear

2002

fDate

11-13 June 2002

Firstpage

190

Lastpage

191

Abstract

The effect of nitrogen doping into Al/sub 2/O/sub 3/ gate dielectric grown by Metal Organic Chemical Vapor Deposition (MOCVD) on MOS device characteristics is described for the first time. The nitrogen doped Al/sub 2/O/sub 3/ (Al/sub 2/O/sub 3/:N) MOSFET has an interface trap density (D/sub it/) as low as 4.3/spl times/10/sup 10/ cm/sup -2/ eV/sup -1/, half that of non-doped Al/sub 2/O/sub 3/ (1.0/spl times/10/sup 11/ cm/sup -2/ eV/sup -1/), and has less C-V hysteresis (39 mV) than that (69 mV) of Al/sub 2/O/sub 3/. These improvements are attributed to nitrogen doping into Al/sub 2/O/sub 3/, which also improves the corresponding MOSFET characteristics of current drivability (I/sub dsat/).

Keywords

MOCVD coatings; MOSFET; alumina; capacitance; dielectric thin films; interface states; nitrogen; Al/sub 2/O/sub 3/:N; C-V hysteresis; MOCVD-grown Al/sub 2/O/sub 3/:N gate dielectric; MOS device characteristics; N doping; current drivability; electrical characteristics; interface trap density; metalorganic chemical vapor deposition; polysilicon gate MOSFETs; Capacitance-voltage characteristics; Chemical vapor deposition; Dielectric devices; Doping; Hysteresis; MOCVD; MOS devices; MOSFET circuits; Nitrogen; Organic chemicals;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2002. Digest of Technical Papers. 2002 Symposium on

Conference_Location

Honolulu, HI, USA

Print_ISBN

0-7803-7312-X

Type

conf

DOI

10.1109/VLSIT.2002.1015447

Filename

1015447