DocumentCode
1910138
Title
Nonlinear RF power amplifier behavioural analysis of wireless OFDM systems
Author
O´Droma, Máirtín ; Lei, Yiming
Author_Institution
Telecommun. Res. Centre, Univ. of Limerick, Limerick, Ireland
fYear
2011
fDate
13-20 Aug. 2011
Firstpage
1
Lastpage
4
Abstract
Four signal representation approaches are combined with a Bessel-Fourier PA envelope behavioural model of a GaN memoryless nonlinear power amplifier (PA) to reveal insights into the nonlinear amplification of multicarrier OFDM signals. Isolating and analyzing different orders of intermodulation product (IMP) impairment, the impact of higher order IMPs on ACPR degradation in the second and higher adjacent channel bands and how that is the determining factor for the PA´s upper limit operating point and power conversion efficiency, rather than the ACPR in the first adjacent band or the inband EVM degradation, may be shown.
Keywords
III-V semiconductors; OFDM modulation; gallium compounds; power amplifiers; radio networks; radiofrequency amplifiers; signal representation; wide band gap semiconductors; ACPR degradation; Bessel-Fourier PA; IMP impairment; higher adjacent channel bands; inband EVM degradation; intermodulation product impairment; nonlinear RF power amplifier behavioural analysis; power conversion efficiency; signal representation approaches; wireless OFDM systems; Degradation; Dynamic range; Gallium nitride; Nonlinear distortion; OFDM; Power amplifiers; Signal representations;
fLanguage
English
Publisher
ieee
Conference_Titel
General Assembly and Scientific Symposium, 2011 XXXth URSI
Conference_Location
Istanbul
Print_ISBN
978-1-4244-5117-3
Type
conf
DOI
10.1109/URSIGASS.2011.6050514
Filename
6050514
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