DocumentCode
1910410
Title
Photon Emission from Sub-Micron p-Channel Mosfets Biased at High Fields
Author
Selmi, Luca ; Lanzoni, Massimo ; Bigliardi, Stefano ; Sangiorgi, Enrico
Author_Institution
Dept.of Electronics, V.le Risorgimento 2, 40136 Bologna, Italy
fYear
1992
fDate
14-17 Sept. 1992
Firstpage
747
Lastpage
750
Abstract
In this paper we report the first experimental data on hot carrier luminescence in silicon p-channel MOS transistors featuring sub-micron gate length. All the terminal currents of the devices (including the gate and substrate currents) were also measured, and their dependence on the applied bias is analyzed and compared to that of the emitted light intensity.
Keywords
Charge carrier processes; Current measurement; Electron emission; Energy measurement; Hot carriers; MOS devices; MOSFETs; Microelectronics; Physics; Vehicles;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
Conference_Location
Leuven, Belgium
Print_ISBN
0444894780
Type
conf
Filename
5435399
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