• DocumentCode
    1910560
  • Title

    Cost effective simulation of three-dimensional effects in the shallow trench isolation process

  • Author

    Sallagoïty, P. ; Ada-Hanifi, M. ; Poncet, A.

  • fYear
    1997
  • fDate
    22-24 September 1997
  • Firstpage
    468
  • Lastpage
    471
  • Keywords
    Analytical models; CMOS process; CMOS technology; Costs; Filling; Isolation technology; MOSFETs; Performance analysis; Telecommunications; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 1997. Proceeding of the 27th European
  • Print_ISBN
    2-86332-221-4
  • Type

    conf

  • DOI
    10.1109/ESSDERC.1997.194467
  • Filename
    1503397
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1910560