• DocumentCode
    1910590
  • Title

    Accurate Analysis of Emitter Ballasting in HBT Power Transistors

  • Author

    Mintsa, R. Mezui ; Hassaine, N. ; Riet, M. ; Villeforceix, B. ; Konczykowska, A. ; Vuye, S. ; Wang, H.

  • Author_Institution
    FRANCE-TELECOM, Centre National d´´Etudes des Télécommunications, Laboratoire de Bagneux, 196 avenue Henri Ravera, 92220 Bagneux (FRANCE)
  • fYear
    1992
  • fDate
    14-17 Sept. 1992
  • Firstpage
    777
  • Lastpage
    780
  • Abstract
    An accurate analysis of emitter ballasting, taking into account the current gain dependence on the temperature and the collector current is presented in this paper. Numerical computations of current-voltage characteristics have been performed using the emitter ballasting resistance as a parameter. Power HBTs for mobile communications have been fabricated. Load-pull measurements at the L band have shown 30 dBm maximum output power and 45% power added efficiency with 8.5dB associated gain.
  • Keywords
    Current-voltage characteristics; Electrical resistance measurement; Electronic ballasts; Gain measurement; Heterojunction bipolar transistors; Mobile communication; Power generation; Power measurement; Power transistors; Temperature dependence;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
  • Conference_Location
    Leuven, Belgium
  • Print_ISBN
    0444894780
  • Type

    conf

  • Filename
    5435406
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1910590