DocumentCode
1910732
Title
Parameter extraction for the static and dynamic model of IGBT
Author
Kim, Hyun-Suk ; Cho, Young-Ho ; Kim, S.-D. ; Choi, Y.-I.
Author_Institution
Dept. of Electr. Eng., Seoul Nat. Univ., Seoul, South Korea
fYear
1993
fDate
20-24 Jun 1993
Firstpage
71
Lastpage
74
Abstract
An insulated gate bipolar transistor (IGBT) device model that can be easily implemented in SPICEII is proposed. The IGBT model parameters are extracted from the experimental results, which are easily obtained from the data book or terminal characteristic. The extracted parameters using this model are to simulate the dynamic IGBT model as well as the steady state model
Keywords
SPICE; circuit analysis computing; digital simulation; insulated gate bipolar transistors; semiconductor device models; IGBT; SPICEII; dynamic model; insulated gate bipolar transistor; parameter extraction; static model; steady state model; Circuit simulation; Data mining; Diodes; Equations; Insulated gate bipolar transistors; Parameter extraction; Power electronics; SPICE; Semiconductor process modeling; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics Specialists Conference, 1993. PESC '93 Record., 24th Annual IEEE
Conference_Location
Seattle, WA
Print_ISBN
0-7803-1243-0
Type
conf
DOI
10.1109/PESC.1993.471937
Filename
471937
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