DocumentCode
1910755
Title
Possibilities of electron beam nano-meter-scale fabrication of Si(111) using alkyl monolayers
Author
Yamada, Taro ; Takano, Nao ; Yamada, Keiko ; Yoshitomi, Shuhei ; Inoue, Tomoyuki ; Osaka, Tetsuya
Author_Institution
Kagani Memorial Lab. for Mater. Sci. & Technol., Waseda Univ., Tokyo, Japan
fYear
2001
fDate
2001
Firstpage
403
Lastpage
408
Abstract
A novel process of electron-beam nanometer-scale fabrication on Si(111) wafer surfaces has been proposed on the basis of application of organic monolayers as the ultimately thin patterning media. The monolayers on Si(111) wafer surfaces composed of alkyl groups (Cn H2n+1_) prepared with the Grignard reagents were subjected to electron-beam patterning, and deposition of metals onto the electron-bombarded patterns by immersion into aqueous solutions containing Ni2+ or Cu2+ ions. This entire process has been put into practice successfully as a benchmark test. The strength of alkyl-covered Si(111) surface against the processing environment such as in vacuum and aqueous solutions has been demonstrated
Keywords
electron beam lithography; elemental semiconductors; monolayers; nanotechnology; organic compounds; silicon; Grignard reagent; Si; Si(111) wafer surface; alkyl group; aqueous solution; electron beam nanometer-scale fabrication; metal deposition; organic monolayer; Atomic beams; Atomic layer deposition; Benchmark testing; Electron beams; Fabrication; Laboratories; Materials science and technology; Nanostructures; Probes; Writing;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology, 2001. IEEE-NANO 2001. Proceedings of the 2001 1st IEEE Conference on
Conference_Location
Maui, HI
Print_ISBN
0-7803-7215-8
Type
conf
DOI
10.1109/NANO.2001.966456
Filename
966456
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