DocumentCode
1910907
Title
Electron heating and quantum transport in deep submicrometer n-MOSFET´s at low temperatures and high magnetic fields
Author
Miéville, J.P. ; Ouisse, T. ; Cristoloveanu, S. ; Revil, N. ; Shi, Z.M. ; Dutoit, M.
Author_Institution
Institute for Micro-and Optoelectronics, Physics Departement, Swiss Federal Institute of Technology (EPFL), CH-1015 Lausanne, Switzerland
fYear
1992
fDate
14-17 Sept. 1992
Firstpage
853
Lastpage
856
Abstract
We studied Shubnikov-de Haas oscillations in Si MOSFET´s with gate lengths ranging from 0.1 ¿m to 2 ¿m. They show a reduction of electron temperature for a given electric field in the shortest devices. In this case, carrier thermalization is incomplete. This result also explains why quantum interferences at zero magnetic field are observed up to unexpectedly large drain biases.
Keywords
Cyclotrons; Electrons; Heating; Interference; MOSFET circuits; Magnetic fields; Orbits; Tellurium; Temperature; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
Conference_Location
Leuven, Belgium
Print_ISBN
0444894780
Type
conf
Filename
5435421
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