Sequential analysis of resonant tunneling diodes

In recent years, it has been established that a substantial part of the current through a double barrier resonant tunneling structure is transported by sequential tunneling instead of fully coherent tunneling. The theoretical framework of sequential tunneling is especially attractive since the admittance of the device can be obtained immediately. In order to complete this model we have investigated the frequency behavior of the charging and discharging phenomena in the quantum well. All geometric capacitances and the quantum capacitance [1] have been taken into account in this model.[2]