DocumentCode
1911091
Title
Generation of four negative differential resistance regions using two resonant tunnelling diodes
Author
Fobelets, K. ; Genoe, J. ; Vounck, R. ; Borghs, G.
Author_Institution
Vrije Universiteit Brussel, ETRO, Pleinlaan 2, B-1050 Brussel, Belgium; IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
fYear
1992
fDate
14-17 Sept. 1992
Firstpage
887
Lastpage
890
Abstract
In this paper we report on the experimental observation of four negative differential resistance regions in the current-voltage characteristic of a monolithically integrated seriesconnection of two resonant tunneling diodes at room temperature. An equivalent circuit of the seriesconnection is proposed which gives an explanation of the experimental results. The required current-voltage characteristics of the two resonant tunneling diodes in the seriesconnection, to generate the multiple negative resistance regions, are discussed. Simulations based on the equivalent circuit, show the possibility of five negative differential resistance regions with a monolithically integrated seriesconnection of two resonant tunneling diodes.
Keywords
Circuit testing; Contact resistance; Diodes; Equivalent circuits; Gallium arsenide; RLC circuits; Resonant tunneling devices; Switching circuits; Thermal resistance; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
Conference_Location
Leuven, Belgium
Print_ISBN
0444894780
Type
conf
Filename
5435428
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