• DocumentCode
    1911091
  • Title

    Generation of four negative differential resistance regions using two resonant tunnelling diodes

  • Author

    Fobelets, K. ; Genoe, J. ; Vounck, R. ; Borghs, G.

  • Author_Institution
    Vrije Universiteit Brussel, ETRO, Pleinlaan 2, B-1050 Brussel, Belgium; IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
  • fYear
    1992
  • fDate
    14-17 Sept. 1992
  • Firstpage
    887
  • Lastpage
    890
  • Abstract
    In this paper we report on the experimental observation of four negative differential resistance regions in the current-voltage characteristic of a monolithically integrated seriesconnection of two resonant tunneling diodes at room temperature. An equivalent circuit of the seriesconnection is proposed which gives an explanation of the experimental results. The required current-voltage characteristics of the two resonant tunneling diodes in the seriesconnection, to generate the multiple negative resistance regions, are discussed. Simulations based on the equivalent circuit, show the possibility of five negative differential resistance regions with a monolithically integrated seriesconnection of two resonant tunneling diodes.
  • Keywords
    Circuit testing; Contact resistance; Diodes; Equivalent circuits; Gallium arsenide; RLC circuits; Resonant tunneling devices; Switching circuits; Thermal resistance; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
  • Conference_Location
    Leuven, Belgium
  • Print_ISBN
    0444894780
  • Type

    conf

  • Filename
    5435428