Electro-mechanical properties of single crystal silicon nano wire

Author

Toriyama, Toshiyuki ; Funai, Daisuke ; Sugiyama, Susumu

Author_Institution

New Energy & Ind. Technol. Dev. Organ., Tokyo, Japan

fYear

2001

fDate

2001

Firstpage

516

Lastpage

521

Abstract

A p-type Si nano wire piezoresistor, whose minimum cross sectional area is 53nm × 53nm, was fabricated by combination of thermal diffusion, electron beam (EB) direct writing and RIE. Maximum value of longitudinal piezoresistance coefficient π_l[011] of the Si nano wire piezoresistor is found to be 48 × 10^-5 (1/MPa) at impurity concentration of 5 × 10¹⁹ (cm^-3), and it has enough sensitivity for mechanical sensor application. Longitudinal piezoresistance coefficient π_l[011] of the Si nano wire piezoresistor enhanced up to 46% with a decrease in the cross sectional area, while transverse piezoresistance coefficient π_l[011] decreased with a decrease in the cross sectional area. An extremely small piezoresistive cantilever for SPM has been proposed by using the nano wire piezoresistor. The proposed piezoresistive cantilever has relatively high sensitivity, and possibility to replace with the optical technique in SPM

Keywords

elemental semiconductors; microsensors; nanotechnology; piezoresistive devices; resistors; scanning probe microscopy; silicon; sputter etching; thermal diffusion; 53 nm; MEMS; RIE; SPM; Si; electromechanical properties; electron beam direct writing; longitudinal piezoresistance coefficient; mechanical sensor application; p-Si piezoresistor; piezoresistive cantilever; reactive ion etching; scanning probe microscopy; single crystal Si nano wire; thermal diffusion; transverse piezoresistance coefficient; Electron beams; Impurities; Mechanical sensors; Optical sensors; Piezoresistance; Scanning probe microscopy; Silicon; Ultraviolet sources; Wire; Writing;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology, 2001. IEEE-NANO 2001. Proceedings of the 2001 1st IEEE Conference on

Conference_Location

Maui, HI

Print_ISBN

0-7803-7215-8

Type

conf

DOI

10.1109/NANO.2001.966477

Filename

966477