• DocumentCode
    1911337
  • Title

    Hot Carrier effects and time-dependent degradation laws in 0.1um bulk Si n-MOSFETs

  • Author

    Marchand, B. ; Szelag, B. ; Ghibaudo, G. ; Balestra, F.

  • Author_Institution
    LPCS (UMR CNRS), ENSERG-INPG, France
  • fYear
    1997
  • fDate
    22-24 September 1997
  • Firstpage
    572
  • Lastpage
    575
  • Keywords
    Aging; Current measurement; Degradation; Hot carrier effects; Hot carriers; MOSFET circuits; Resistance heating; Stress; Substrates; Transconductance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 1997. Proceeding of the 27th European
  • Print_ISBN
    2-86332-221-4
  • Type

    conf

  • DOI
    10.1109/ESSDERC.1997.194493
  • Filename
    1503423
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1911337