Enhanced hot-carrier induced degradation in STI isolated NMOS transistors

Author

Sallagoity, P. ; Labiadh, A. ; Alieu, J. ; Haond, M.

Author_Institution

SGS-Thomson Microelectronics, France

fYear

1997

fDate

22-24 September 1997

Firstpage

576

Lastpage

579

Keywords

CMOS technology; Degradation; Etching; Hot carriers; Isolation technology; MOSFETs; Silicon; Stress; Telecommunications; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 1997. Proceeding of the 27th European

Print_ISBN

2-86332-221-4

Type

DOI

10.1109/ESSDERC.1997.194494

Filename

1503424

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