DocumentCode
1911574
Title
A new structure for reduction of the leakage currrent in the low temperature Poly-Si TFTs fabricated by the MILC process
Author
Ihn, Tae-Hyung ; Lee, Byung-Il ; Joo, Seung-Ki
Author_Institution
Seoul National University, Korea
fYear
1997
fDate
22-24 September 1997
Firstpage
612
Lastpage
615
Keywords
Active matrix liquid crystal displays; Annealing; Crystallization; Dielectric thin films; Leakage current; Plasma applications; Plasma chemistry; Plasma temperature; Sputtering; Thin film transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Device Research Conference, 1997. Proceeding of the 27th European
Print_ISBN
2-86332-221-4
Type
conf
DOI
10.1109/ESSDERC.1997.194503
Filename
1503433
Link To Document