DocumentCode
1911810
Title
Low-Power High-Rensponsivity CMOS Temperature Sensor
Author
Dantas, J.M.C. ; Costa, H.J.B. ; Dantas, J.P.M. ; Filho, F. A Brito ; Sousa, F. Rangel ; Freire, R.C.S.
Author_Institution
EEs/EE/CT, Fed. Univ. of Rio Grande do Norte, Natal
fYear
2008
fDate
12-15 May 2008
Firstpage
1234
Lastpage
1238
Abstract
This paper proposes a low-power CMOS temperature sensor based on subthreshold MOSFET operation. The circuit was designed on AMIS 0.5 mum technology and ocuppies a silicon area of 0.035 mm2 . Simulations show a responsivity of -8.92 mV/C, a resolution of 0.004degC and power consumption of 10 muW.
Keywords
CMOS integrated circuits; MOSFET; temperature sensors; high-rensponsivity temperature sensor; low-power CMOS temperature sensor; subthreshold MOSFET operation; Ambient intelligence; CMOS process; CMOS technology; Circuit simulation; Energy consumption; Fabrication; MOSFET circuits; Sensor phenomena and characterization; Silicon; Temperature sensors; MOSFET; PTAT; Subthreshold; Temperature Sensor;
fLanguage
English
Publisher
ieee
Conference_Titel
Instrumentation and Measurement Technology Conference Proceedings, 2008. IMTC 2008. IEEE
Conference_Location
Victoria, BC
ISSN
1091-5281
Print_ISBN
978-1-4244-1540-3
Electronic_ISBN
1091-5281
Type
conf
DOI
10.1109/IMTC.2008.4547230
Filename
4547230
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