• DocumentCode
    1911878
  • Title

    Noise Performance of MESFETs and MODFETs: Influence of the Gate Leakage Current

  • Author

    Danneville, Frangois ; Dambrine, G. ; Happy, H. ; Cappy, A.

  • Author_Institution
    Inst. d´´Electron. et de Microelectron. du Nord, Univ. des Sci. et Technol. de LILLE, Villeneuve-d´´Ascq, France
  • fYear
    1993
  • fDate
    13-16 Sept. 1993
  • Firstpage
    47
  • Lastpage
    50
  • Abstract
    In this paper, the influence of the gate leakage current on the noise performance of MESFETs and MODFETs is investigated. The theoretical results are discussed and it is shown that the noise performance of FETs is strongly dependent on the gate leakage current value, especially at a few GHz.
  • Keywords
    Schottky gate field effect transistors; high electron mobility transistors; leakage currents; semiconductor device noise; MESFET; MODFET; gate leakage current; noise performance; Acoustical engineering; Circuit noise; FETs; Frequency; HEMTs; Leakage current; Low-frequency noise; MESFETs; MODFETs; Noise figure;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
  • Conference_Location
    Grenoble
  • Print_ISBN
    2863321358
  • Type

    conf

  • Filename
    5435460
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1911878