• DocumentCode
    1912222
  • Title

    Eliminating polymer flake defects using an oxygen free chemistry

  • Author

    Chang, Hong ; Wilson, Cheri ; Jackson, James

  • Author_Institution
    Intel Corp., Hillsboro, OR, USA
  • fYear
    1997
  • fDate
    6-8 Oct 1997
  • Abstract
    Catastrophic defect excursions existed in a plasma etch process due to polymer flaking. Several possible fixes such as an in-situ particle check and a Cl2 plasma clean were investigated without effectively eliminating this yield limiting defect. This paper will describe how an oxygen free chemistry was adopted to eliminate the polymer flake defect. This process change eliminated polymer flake excursions, improved factory line yield by more than 1% and increased etcher availability by 15%
  • Keywords
    integrated circuit yield; sputter etching; surface cleaning; catastrophic defect excursions; flake defects elimination; improved factory line yield; increased etcher availability; oxygen free chemistry; plasma etch process; polymer flaking; recess etch; yield limiting defect; Cathodes; Electrodes; Etching; Oxygen; Plasma applications; Plasma chemistry; Plasma temperature; Polymers; Surface cleaning; Surface cracks;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Manufacturing Conference Proceedings, 1997 IEEE International Symposium on
  • Conference_Location
    San Francisco, CA
  • Print_ISBN
    0-7803-3752-2
  • Type

    conf

  • DOI
    10.1109/ISSM.1997.664632
  • Filename
    664632
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1912222