• DocumentCode
    191225
  • Title

    High gain graphene field effect transistors for wideband amplifiers

  • Author

    Habibpour, Omid ; Winters, Michael ; Rorsman, Niklas ; Zirath, Herbert

  • Author_Institution
    Microtechnol. & Nanosci. Dept., Chalmers Univ. of Technol., Gothenburg, Sweden
  • fYear
    2014
  • fDate
    6-9 Oct. 2014
  • Firstpage
    371
  • Lastpage
    373
  • Abstract
    We demonstrate graphene field of transistors (G-FETs) providing power gain of > 7 dB in a 50 O system. The G-FETs have |S21| > 0 dB up to 7 GHz. The result indicates the feasibility for G-FET based wideband amplifiers.
  • Keywords
    field effect transistors; graphene devices; microwave amplifiers; wideband amplifiers; G-FET based wideband amplifiers; graphene field effect transistors; Broadband amplifiers; Field effect transistors; Gain; Graphene; Logic gates; Resists; Transconductance; Graphene FET; hydrogen intercalated graphene; power gain; wideband amplifiers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference (EuMC), 2014 44th European
  • Conference_Location
    Rome
  • Type

    conf

  • DOI
    10.1109/EuMC.2014.6986447
  • Filename
    6986447
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=191225