DocumentCode
1913082
Title
Carrier Heating induced Picosecond Operation of GaInAsP/InP Laser Diode
Author
Tolstikhin, V.L. ; Polyakov, S.V.
Author_Institution
Inst. of Radio Eng. & Electron., Moscow, Russia
fYear
1993
fDate
13-16 Sept. 1993
Firstpage
291
Lastpage
294
Abstract
Carrier heating affect on the operation of a GalnAsP/InP single-frequency laser diode is theoretically studied and numerically simulated. It is shown that fast processes of carrier heating and cooling may be used for a deep modulation in a picosecond time scale.
Keywords
III-V semiconductors; arsenic compounds; gallium compounds; high-speed optical techniques; indium compounds; laser cooling; numerical analysis; optical modulation; semiconductor lasers; GaInAsP-InP; carrier heating; cooling; deep modulation; numerical simulation; picosecond time scale; single frequency laser diode; Charge carrier processes; Cooling; Diode lasers; Equations; Heating; Indium phosphide; Laser modes; Laser theory; Numerical simulation; Temperature dependence;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
Conference_Location
Grenoble
Print_ISBN
2863321358
Type
conf
Filename
5435508
Link To Document