DocumentCode
191313
Title
GaN HEMT structure modeling and characterization techniques
Author
Wen, Cheng P.
Author_Institution
Inst. of Micoelectronics, Peking Univ., Beijing, China
fYear
2014
fDate
24-26 March 2014
Firstpage
1
Lastpage
5
Abstract
A novel device model has been established for GaN HEMT, featuring polarization induced, positive/ negative charge pairs. Unconventional techniques are found necessary to characterize, and to optimize the design of the polar semiconductor based device for transient (current collapse) free, efficient, microwave power amplification in communication systems.
Keywords
III-V semiconductors; gallium compounds; high electron mobility transistors; semiconductor device models; wide band gap semiconductors; GaN; HEMT characterization techniques; HEMT structure modeling; communication systems; microwave power amplification; polar semiconductor based device; polarization induced charge pairs; positive-negative charge pairs; Aluminum gallium nitride; Charge carrier processes; Gallium nitride; HEMTs; MODFETs; Mobile communication; Slabs; GaN HEMT; Polarization induced charge pairs; current collapse; power amplifier;
fLanguage
English
Publisher
ieee
Conference_Titel
Wireless Symposium (IWS), 2014 IEEE International
Conference_Location
X´ian
Type
conf
DOI
10.1109/IEEE-IWS.2014.6864186
Filename
6864186
Link To Document