• DocumentCode
    1913178
  • Title

    Si1-x,Gex Heterojunction Bipolar Transistors: the future of silicon bipolar technology or not?

  • Author

    Ashbum, P. ; Shafi, Z A ; Post, I R C ; Gregory, H.J.

  • Author_Institution
    Dept. of Electron. & Comput. Sci., Univ. of Southampton, Southampton, UK
  • fYear
    1993
  • fDate
    13-16 Sept. 1993
  • Firstpage
    301
  • Lastpage
    308
  • Abstract
    This paper reviews recent progress in high-speed Si/Si1-xGex heterojunction bipolar transistors. The values of fT and ECL gate delay achieved with these devices are described and compared with results for silicon homojunction bipolar transistors. The technological problems associated with the use of Si1-xGex are discussed, and device and circuit modelling results are presented which highlight the future prospects of Si1-xGex technology.
  • Keywords
    Ge-Si alloys; heterojunction bipolar transistors; semiconductor device models; Si-Si1-xGex; circuit modelling; device modelling; heterojunction bipolar transistor; high speed bipolar transistor; silicon bipolar technology; Bipolar transistors; Boron; Circuits; Computer science; Delay; Heterojunction bipolar transistors; Ion implantation; Parasitic capacitance; Silicon; Tail;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
  • Conference_Location
    Grenoble
  • Print_ISBN
    2863321358
  • Type

    conf

  • Filename
    5435510
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1913178