A 270 GHz push-push oscillator in InP-DHBT-on-BiCMOS technology

Author

Hossain, M. ; Weimann, N. ; Krueger, O. ; Krozer, V. ; Heinrich, W.

Author_Institution

Leibniz-Inst. fur Hochstfrequenztechnik, Ferdinand-Braun-Inst. (FBH), Berlin, Germany

fYear

2014

fDate

6-9 Oct. 2014

Firstpage

588

Lastpage

591

Abstract

A 270-GHz reflection-type push-push oscillator is presented, realized using 0.8μm emitter InP-DHBTs. The InP DHBT-on-BiCMOS offers both InP HBT and BiCMOS technologies but in this case only the InP part is used. The transistors exhibit a maximum oscillation frequency f_max of 300 GHz. The oscillator delivers -9.5 dBm output power. DC consumption is only 31 mW from a 1.8 volts power supply, which corresponds to 0.4 % overall DC-to-RF efficiency.

Keywords

BiCMOS integrated circuits; III-V semiconductors; bipolar MIMIC; heterojunction bipolar transistors; indium compounds; millimetre wave oscillators; DC consumption; InP; InP-DHBT-on-BiCMOS technology; frequency 270 GHz; oscillation frequency; power 31 mW; reflection-type push-push oscillator; size 0.8 mum; voltage 1.8 V; Harmonic analysis; Indium phosphide; Microwave circuits; Microwave oscillators; Power generation; Transmission line measurements; InP double heterojunction bipolar transistor (DHBT); monolithic microwave integrated circuit (MMIC) oscillators; reflection oscillator; sub-terahertz (THz); transferred-substrate;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference (EuMC), 2014 44th European

Conference_Location

Rome

Type

conf

DOI

10.1109/EuMC.2014.6986502

Filename

6986502