Modelling of electrostatic properties of <110> uniaxially strained silicon n-channel mosfets

Author

Rahman, Md Manzur

Author_Institution

Bangladesh Univ. of Eng. & Electron., Dhaka

fYear

2008

fDate

24-25 Sept. 2008

Firstpage

155

Lastpage

160

Abstract

In this paper, an accurate and efficient one dimensional self-consistent numerical solution of <110> uniaxially strained n-MOS structure is presented based on finite element method. The solution is developed using FEMLAB. Significant change occurs in the Eigen energies and the electron occupancies, intrinsic carrier concentration, inversion layer penetration and gate capacitance because of <110> uniaxial tensile stress. The consequences of these changes due to strain are explained.

Keywords

MOSFET; finite element analysis; semiconductor device models; silicon; 1D self consistent numerical solution; Eigen energies; FEMLAB; electron occupancies; electrostatic properties; finite element method; gate capacitance; intrinsic carrier concentration; inversion layer penetration; n-channel MOSFETS; uniaxial tensile stress; uniaxially strained silicon; Capacitance; Capacitive sensors; Electrons; Electrostatics; MOS devices; MOSFETs; Poisson equations; Silicon; Tensile stress; Uniaxial strain;

fLanguage

English

Publisher

ieee

Conference_Titel

Actual Problems of Electron Devices Engineering, 2008. APEDE '08. International Conference on

Conference_Location

Saratov

Print_ISBN

978-1-4244-2121-3

Electronic_ISBN

978-1-4244-2122-0

Type

conf

DOI

10.1109/APEDE.2008.4720131

Filename

4720131