• DocumentCode
    1913862
  • Title

    Reduction of Bulk Oxide Trapping in poly-Si Gated MOS Capacitors by Fluorination

  • Author

    Afanas, V.V. ; de Nijs, J.M.M. ; Balk, P.

  • Author_Institution
    DIMES, Delft Univ. of Technol., Delft, Netherlands
  • fYear
    1993
  • fDate
    13-16 Sept. 1993
  • Firstpage
    415
  • Lastpage
    418
  • Abstract
    The effect of fluorination on the bulk oxide traps in poly-Si/SiO2/Si capacitors was studied using charge injection techniques. A substantial reduction of the density of both electron and hole traps was observed after fluorine implantation into the gate. The process of trap elimination was found to be dependent on the presence of hydrogen in the oxide, suggesting the involvement of some mobile species, e.g. HF.
  • Keywords
    MOS capacitors; electron traps; fluorine; hole traps; ion implantation; silicon; silicon compounds; Si-SiO2-Si; Si:F; bulk oxide trapping; charge injection; electron traps; fluorination effect; fluorine implantation; hole traps; poly-Si gated MOS capacitors; trap elimination; Annealing; Charge carrier processes; Degradation; Electron traps; Hafnium; Hydrogen; Kinetic theory; MOS capacitors; MOSFET circuits; Physics;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
  • Conference_Location
    Grenoble
  • Print_ISBN
    2863321358
  • Type

    conf

  • Filename
    5435534
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1913862