PTFTs with blends of P3HT:F8T2

Author

Avila, M. ; Ulloa, F. ; Sanchez, J.G. ; Estrada, M.

Author_Institution

Depto. Ing. Electr., CINVESTAV-IPN, Mexico City, Mexico

fYear

2012

fDate

14-17 March 2012

Firstpage

1

Lastpage

4

Abstract

In this paper, we characterize MIS structures and PTFTs made with blends of P3HT:F8T2 as active layer and PMMA as dielectric. The properties of the interface between the dielectric and the active layer are analyzed using CV curves and compared to those obtained for P3HT and F8T2 as active layer. Mobility and its dependence with gate voltage, the distribution of states DOS in the active layer of the PTFTs and other device parameters were obtained and analyzed. It was found that the characteristic temperature of the distribution of States, DOS in P3HT is the lowest, increasing slightly for the blend, but quite significant in F8T2 PTFTs, while the density of localized states is highest for the blend. Mobility resulted lower than for P3HT devices, but higher than for F8T2. The interface density of states also increases.

Keywords

conducting polymers; electron mobility; electronic density of states; polymer blends; polymer films; semiconductor thin films; thin film transistors; CV curves; MIS structures; P3HT devices; P3HT:F8T2; PMMA; PTFT; active layer; characteristic temperature; device parameters; dielectric layer; gate voltage; interface density of states; localized states; mobility; state distribution; states DOS; Capacitors; Dielectric measurements; Frequency measurement; Niobium; Plastics; Semiconductor device measurement; Thin film transistors; F8T2 PTFTs; OTFTs; P3HT; P3HT:F8T2 blends; PTFTs;

fLanguage

English

Publisher

ieee

Conference_Titel

Devices, Circuits and Systems (ICCDCS), 2012 8th International Caribbean Conference on

Conference_Location

Playa del Carmen

Print_ISBN

978-1-4577-1116-9

Electronic_ISBN

978-1-4577-1115-2

Type

conf

DOI

10.1109/ICCDCS.2012.6188917

Filename

6188917