Characterization of Semiconductor Device Structures with Ultrathin Layers by Raman Scattering

Author

Mintairov, A. ; Smekalin, K.

Author_Institution

Ioffe Phys. Tech. Inst., St. Petersburg, Russia

fYear

1993

fDate

13-16 Sept. 1993

Firstpage

523

Lastpage

526

Abstract

In this paper, the authors show that Raman spectroscopy can provide useful more detailed information on composition of mixed crystals, carrier concentration and mobility and depth profiles of ultrathin crystalline films and multilayer structures. It can serve for investigation of layers with thicknesses of tens of angstroms in a multilayer structure. As a proof , the authors used AlGaAs compound and AlGaAs/GaAs structures. The method can be extended to other semiconductor compounds.

Keywords

III-V semiconductors; Raman spectra; Raman spectroscopy; aluminium compounds; carrier density; carrier mobility; gallium arsenide; semiconductor devices; spectrochemical analysis; AlGaAs; AlGaAs-GaAs; Raman scattering; Raman spectroscopy; carrier concentration; depth profiles; mixed crystal; mobility; multilayer structures; semiconductor device structure characterization; ultrathin crystalline films; ultrathin layer; Crystallization; Frequency; Nonhomogeneous media; Optical films; Optical scattering; Phonons; Raman scattering; Semiconductor device measurement; Semiconductor devices; Surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European

Conference_Location

Grenoble

Print_ISBN

2863321358

Type

conf

Filename

5435555