• DocumentCode
    1914853
  • Title

    Heat Generation in High Power hemt´s Size Estimashion

  • Author

    Berejnova, P.V. ; Lukashin, V.M. ; Pashkovskii, A.B.

  • Author_Institution
    Fed. State Unitary Corp. R&PC, Fryazino
  • fYear
    2007
  • fDate
    10-14 Sept. 2007
  • Firstpage
    119
  • Lastpage
    120
  • Abstract
    A simple model for the heat generation area size depending on HEMT topology and active layers properties is developed. It is shown that real heat generation area size is much less than transistor structure period and the gate drain distance.
  • Keywords
    heat transfer; power HEMT; semiconductor device models; HEMT topology; active layers; gate drain distance; heat generation area size; high-power HEMT model; transistor structure period; Electromagnetic heating; Electron mobility; Gallium arsenide; HEMTs; Power generation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave & Telecommunication Technology, 2007. CriMiCo 2007. 17th International Crimean Conference
  • Conference_Location
    Crimea
  • Print_ISBN
    978-966-335-012-7
  • Type

    conf

  • DOI
    10.1109/CRMICO.2007.4368652
  • Filename
    4368652
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1914853