DocumentCode
1915227
Title
Highly Sensitive Gated InGaAs/InP Hall Sensors With Low Temperature Coefficient of the Sensitivity
Author
Kyburz, R. ; Schmid, J. ; Popovic, R.S. ; Melchior, H.
Author_Institution
Inst. of Quantum Electron., Swiss Fed. Inst. of Technol., Zurich, Switzerland
fYear
1993
fDate
13-16 Sept. 1993
Firstpage
655
Lastpage
658
Abstract
InGaAs/InP Hall sensors with MOVPE grown layer structures similar to DHFETs are reported. Magnetic sensitivities reach high values of 1350 V/AT for active layers with moderate sheet resistances of 920 Ω/square. Under optimized biasing conditions the temperature dependence of the magnetic sensitivity is as low as 20 ppm/K.
Keywords
Hall effect transducers; III-V semiconductors; MOCVD coatings; gallium arsenide; indium compounds; vapour phase epitaxial growth; InGaAs-InP; MOVPE grown layer; highly sensitive gated Hall sensor; low temperature coefficient; magnetic sensitivity; optimized biasing; temperature dependence; Electron mobility; Epitaxial growth; Epitaxial layers; Geometry; Indium gallium arsenide; Indium phosphide; Magnetic sensors; Temperature dependence; Temperature sensors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
Conference_Location
Grenoble
Print_ISBN
2863321358
Type
conf
Filename
5435582
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